Mr Ryan Alexander

3rd year PhD student

Areas of Research:

• Small signal modulation characteristics of 1.3μm Quantum Dot
• Effects of p-doping on QD lasers

Publications:

1. S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg.
   Design, growth, fabrication, and characterization of InAs/GaAs 1.3µm quantum dot broadband superluminescent light emitting diodes.
   J. Appl. Phys. 100, 103105 (2006)
   
   
2. R.R.Alexander, D.Childs, H.Agarwal, K.M.Groom, H.Liu, M.Hopkinson, R.A.Hogg
   Zero and controllable linewidth enhancement factor in p-doped 1.3μm QD lasers.
   Japan. Jnl. Appl. Phy. Vol. 46 (2007) No. 4B (to be published April 2007)
   

Presentations:

• δ-p-doping 1.3 µm QD Lasers –Gain, Loss, T0, LEF, Modulation Dynamics
  SSDM 13th-15th Sept 2006, Yokohama Japan
  
  
• Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers.
  Quantum Dot meeting 19th Jan 2007 University of Nottingham
  
  
• Systematic Study of the Effects of δ-p-doping on 1.3μm Dot-in-Well Lasers
  IPRM 14-18 May 2007, Matsue Japan
  

Posters:

• Systematic Study of the Effects of δ-p-doping on 1.3 μm Quantum Dot Lasers
  •UK Compound Semiconductors, Sheffield, UK, 4-5th of July, (2006)
  

First Degree:

• BAE Systems
  Hardware Design Engineer Head Up Displays
  Aug 01-Aug 04
  
  
• Nortel Networks
  Technician on 10GBs-1 optical network systems
  Feb 00-Aug 01
  
  

Fellowships:
JSPS Summer Programme Fellow June-Sept 06
Arakawa labs, IIS, University of Tokyo