Welcome to the EPSRC National Centre for III-V Technologies
The EPSRC National Centre for III-V Technologies is internationally known for the production of state-of-the-art semiconductor epitaxy and device fabrication using III-V semiconductors.
Our mission is to provide collaborative access to world class expertise and facilities, thus enabling top-rate scientific research in the physical, engineering and biomedical sciences. This is achieved by the provision of state-of-the-art epitaxial materials and characterization, advanced technologies for device fabrication, and the provision of custom opto-electronic and electronic devices.
We work with a large number of UK research groups providing both grown wafers and devices to underpin their activities. The majority of this research is performed by academic groups, supported by grants from the EPSRC with also significant funding from BBSRC, MOD, DTI (BERR), EU and industrial sources.
An overview of the Centre can be found in the pdf download to the right of this text (National Centre Overview), and in the Background and Statistical Information section to the left.
The Centre grows and fabricates complex device structures in all the commonly used III-V materials systems. These include nitrides, phosphides, arsenides, and antimonides.
It is grouped into four main sections as follows:
Molecular Beam Epitaxy (Growth of Arsenides, Phosphides and Antimonides)
Metalorganic Vapour Phase Epitaxy (Growth of Arsenides and Phosphides)
Nitride Metalorganic Vapour Phase Epitaxy
Device Fabrication
If you would like to know more about using the National Centre to support your research, then please see our page:
Becoming a User
In addition to supplying Academic research groups we can also provide material to industrialists either as part of a research collaboration or on a commercial basis. Please contact us for further details.
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