The University of Sheffield
FEGTEM

Research

Major Research Projects

Current 'in house' research projects at USETEM include:

The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors (pdf document 355k)

Structural studies of a combined InAlAs–InGaAs capping layer on 1.3-µm Inas/GaAs quantum dots (pdf document 855k)

A Study of Si/SiGe n-MOSFET Processed and Unprocessed Channel Layers Using FIB and TEM Methods (pdf document 535k)

Failure Analysis Studies in Pseudomorphic Si/SiGe Channel p-MOSFET Devices (pdf document, 685k)

On the structure and composition of nanoscale TiAlN/VN multilayers (pdf document 3.1Mb)

Elemental distributions and substrate rotation in industrial TiAlN/VN superlattice hard PVD coatings (pdf document, 1.1Mb)

Electron energy-loss spectroscopy (EELS) studies of an yttria stabilised TZP ceramic (pdf document 290k)

On the structure and oxidation mechanisms in nanoscale hard coatings (pdf document 1Mb)

Evolution of microstructure and hardening in mechanically alloyed Al-Ti-O based materials (pdf document 985k)

Oxidation behaviour of nanoscale TiAlN-VN multilayer coatings (pdf document 1.6Mb)

Advanced Electron Microscopy of Semiconducting Materials

High Resolution Studies of Layers and Interfaces

Low Energy Ion Implants in Si

Strain Measurements in ULSI Devices

Studies of SiGe/Si HMOS Transistors

Studies of Nanostructured Materials