Latest News and Recent Research Highlights

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• 16/08/05: AlGaN/GaN HFETs for High Power/ High Temperature Operation
  High performance AlGaN/GaN HFETs have been recently developed for high power and high temperature operation. Electron beam lithography was used to pattern the gates with lengths ranging from 50nm to 350nm.

• 29/04/05: Fabrication of very high finesse microcavity pillars
  World record cavity finesses have been obtained from sub-micron microcavity pillars fabricated with electron beam lithography.